08/15/2007 • Metrology • Sensor Technology

ML5xxx series of high power laser diodes

Mitsubishi Electric shows its ML5xxx series of high power laser diodes for the first time at the Laser World of Photonics. While the ML5CPxx devices offer output power rates of up to 60W, the smaller ML561E10- 01 is specified with 1W. All these devices operate in the popular 808nm wavelength-range.

HPLDs from Mitsubishi Electric
Based on several decades of experience in the development of laser diodes for optical data-storage, Mitsubishi Electric started the production of semiconductor-based lasers for high power appliances in 2003. This new group of products offers several striking advantages compared to conventional lasers, which are not based on semiconductor technology.

For example the HPLDs from Mitsubishi Electric are available at lower asset costs and lower maintenance costs while simultaneously providing higher wall-plug efficiencies and longer lifetimes. High Power Laser Diodes can be used in a wide range of applications in order to process and condition materials. Typical applications are in welding, cutting, drilling, surface treatment, marking among others.

ML5xxx series
The ML5xxx series from Mitsubishi Electric is a family of high performance laser diodes (HPLDs). These devices are typically used in stacks for DPSS lasers (Diode-Pumped-Solid-State) in order to achieve output power rates of several thousand Watt at high beam quality. As the beam quality of the LD chips is getting better, more and more direct-use operations occur.

In addition to the typical industrial applications, the scope of applications for HPLDs comprises the medical sector (e.g. hair removal, tissue cutting, thermo-therapy, odontology, eye surgery etc.), the test and measurement sector (LIDAR, Light Detection and Ranging) as well as the use in scientific, printing and film-exposure applications.

ML5CPxx
The highly-efficient semiconductor laser bars ML5CP8, ML5CP9 and ML5CPxx provide a stable oscillation with an emission wavelength of 807nm and standard CW light output power rates of 40W or, respectively, 60W. The multi-emitter chip of these new laser diodes measures just 10mm x 1.0mm or 10mm x 1.2mm. It is equipped with different electrode structures in order to enable good bonding capabilities for AuSn (ML5CP8) and In solders (ML5CP9).

For example, ML5CP8 operates with small internal losses, thereby improving the slope efficiency (reduction of the operating current). Also, ML5CP8 has an Al-free single quantum well active layer, which prevents Catastrophic Optical Degradation (COD) even at extremely high output powers. Furthermore, this leads to highly reliable operation.

ML561E10-01
Based on the sophisticated technology and production of 808nm bars, Mitsubishi Electric released the single emitter ML561E10-01 with a CW light output of at least 1.0W at an emitting wavelength of typically 805nm. ML561E10 is integrated in a TO-CAN package with a diameter of 10.5mm.

Due to the Al-free MOCVD structure this laser diode's active layer is highly
reliable as well and can generate an optical output power that is several
times as high as the nominal output.
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