FEI Company has released the V600FIB, an all-new focused ion beam (FIB) system designed to provide optimum flexibility for high-throughput applications including circuit modification, cross-sectioning, sample prep and failure analysis for semiconductor devices with designs down to 90 nm. The upgradeable platform is designed to ultimately provide advanced circuit edit applications for designs below 65 nm, giving users the full range of capabilities they need today, and a cost-effective path for meeting future requirements. The rapid time-to-data for defect analysis and shortened cycles for device debugging provided by FEIs FIB and DualBeam (FIB/SEM) tools help semiconductor manufacturers finalise chip designs and achieve full production ramps faster and more efficiently.
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